We have discovered dielectric materials that enable the application of much larger voltages appliedto what was possible before and as such constitute an important breakthrough for the construction of a new generation of trapped-ion quantum computers. The new materials will enable storing quantum bits on the chip for much longer.
In-vacuum surface flashover of SiN, AlN, and etched SiO2 thin films at micrometre scales
About the Author: Emily Crozier
